The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
- 1 July 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (7A) , L1080
- https://doi.org/10.1143/jjap.28.l1080
Abstract
The self-limiting growth of atomic layer epitaxy by metalorganic molecular beam epitaxy using trimethylgallium (TMGa) and arsine (AsH3) was studied as a function of substrate surface condition. It was observed that GaAs growth from TMGa and AsH3 is limited to 1 monolayer (ML) on an As-stabilized surface and that TMGa can adsorb on a Gacovered surface. In-situ observation of RHEED intensity showed that the TMGa in excess of 1 ML on the GaAs substrate desorbed after TMGa supply was stopped. It was found that self-limiting monolayer growth resulted from desorption of the excess TMGa.Keywords
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