Desorption of the Excess Gallium Atoms at the Surface of Gallium Arsenide and Application to Atomic Layer Epitaxy
- 1 February 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (2A) , L287
- https://doi.org/10.1143/jjap.28.l287
Abstract
Desorption of the excess gallium atoms at the gallium arsenide surface is studied by means of an alternating source supply method. The activation energy of the desorption is estimated to be 2.5 eV, which is substantially smaller than that of the sublimation of Ga atoms from GaAs crystal (4.9 eV). Using this desorption behavior, the possibility of atomic layer epitaxy by molecular beam epitaxy is examined.Keywords
This publication has 6 references indexed in Scilit:
- Migration-Enhanced Epitaxy of GaAs and AlGaAsJapanese Journal of Applied Physics, 1988
- Mass-action control of AlGaAs and GaAs growth in molecular beam epitaxyApplied Physics Letters, 1985
- Layer-by-layer sublimation observed by reflection high-energy electron diffraction intensity oscillation in a molecular beam epitaxy systemApplied Physics Letters, 1985
- The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam techniqueJournal of Physics and Chemistry of Solids, 1973
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967
- Phase equilibria in the GaAs and the GaP systemsJournal of Physics and Chemistry of Solids, 1965