Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy
- 29 September 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (13) , 785-787
- https://doi.org/10.1063/1.97546
Abstract
Growth of GaAs by repeated deposition of single atomic layers using the switched laser metalorganic vapor phase epitaxy technique is reported. Suspension of Ga deposition at 100% coverage is an essential part of the growth mechanism for stepwise epitaxy—the ideal atomic layer epitaxy. This is achieved by suppressing pyrolytic decomposition and favoring photocatalytic decomposition of trimethylgallium (TMG). A growth model for stepwise monolayer epitaxy is proposed which suggests that photocatalytic decomposition of TMG occurs only at surface As atoms and not at Ga atoms.Keywords
This publication has 3 references indexed in Scilit:
- Growth of GaAs by switched laser metalorganic vapor phase epitaxyApplied Physics Letters, 1986
- Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAsApplied Physics Letters, 1985
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985