Copper nitride thin films prepared by radio-frequency reactive sputtering
- 15 September 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (6) , 4104-4107
- https://doi.org/10.1063/1.359868
Abstract
Copper nitride thin films were obtained by the reactive sputtering method. A metallic copper target was sputtered in nitrogen gas with radio‐frequency (rf) magnetron sputtering equipment. Highly [100]‐oriented polycrystalline films of the cubic anti‐ReO3 structure were obtained. Films with a lattice constant above 3.868 Å were conductors, while films with a lattice constant below 3.868 Å were insulators. The resistivity of conducting films was 0.5–3×10−2 Ω cm. The insulating films showed an optical energy gap of 1.3 eV, while the conducting films showed a smaller value which decreased with decreasing resistivity.This publication has 6 references indexed in Scilit:
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