Use of triethylindium and bisphosphinoethane for the growth on InP by chemical beam epitaxy
- 26 October 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (17) , 2099-2101
- https://doi.org/10.1063/1.108491
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Growth of high purity InP by metalorganic MBE (CBE)Journal of Crystal Growth, 1990
- Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphineApplied Physics Letters, 1990
- GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxyApplied Physics Letters, 1984