Ferromagnetic after effect due to interstitials in electron irradiated nickel

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Abstract
The magnetic after effect (MAE) and the annealing of the electrical resistivity has been measured simultaneously in the temperature range of stage I of electron irradiated Ni. The results show that the interstitials which become mobile in stage I are responsible for the magnetic relaxation phenomena observed in this temperature range. From a careful comparison of the magnetic relaxation times with the characteristic times observed for the resistivity annealing it can be concluded that the reorientation of (dumb-bell) interstitials during their free migration is responsible for the observed MAE. The long range diffusion of interstitials into the Bloch walls as possible source for the observed MAE can be ruled out.