Low-temperature photocurrent studies of electron-state coupling in asymmetric coupled quantum wells
- 15 January 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (2) , 1365-1368
- https://doi.org/10.1103/physrevb.39.1365
Abstract
We report the results of low-temperature photocurrent studies of an asymmetric coupled-quantum-well system in which the degree of asymmetry is relatively large. A straightforward interpretation of the results in terms of an avoided level crossing of electron states is obtained because the electron levels can be delocalized by application of an electric field, whereas the hole levels remain localized. The optical properties of this system are particularly sensitive to the conduction-band well depth and can therefore be used to determine band offsets.Keywords
This publication has 14 references indexed in Scilit:
- Second-order susceptibility of asymmetric coupled quantum well structuresApplied Physics Letters, 1987
- Extremely low-intensity optical nonlinearity in asymmetric coupled quantum wellsApplied Physics Letters, 1987
- Effect of electric fields on excitons in a coupled double-quantum-well structurePhysical Review B, 1987
- Stark effect in AlxGa1−xAs/GaAs coupled quantum wellsApplied Physics Letters, 1987
- Electroabsorption in GaAs/AlGaAs coupled quantum well waveguidesApplied Physics Letters, 1987
- Photocurrent spectroscopy of GaAs/As quantum wells in an electric fieldPhysical Review B, 1986
- Carrier lifetimes and localisation in coupled GaAs-GaAlAs quantum wells in high electric fieldsJournal of Physics C: Solid State Physics, 1986
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984
- Photoluminescence and excitation spectroscopy in coupled GaAs-Ga(Al)As quantum wellsSurface Science, 1984