Photoelectromagnetic effect in p-type HgCdTe layers grown by liquid phase epitaxy
- 28 December 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (26) , 2239-2241
- https://doi.org/10.1063/1.98952
Abstract
Photo‐electro‐magnetic effect measurements of p‐type Hg1−xCdxTe layers are made at 80 K as a function of the magnetic field. A negative (anomalous) effect is observed. The basic properties of the minority carriers, mobility, lifetime, surface and interface recombination rates, are determined from best fitting of the experimental data to the theory.Keywords
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