Thermally activated dislocation sources in silicon single crystals
- 16 August 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 2 (4) , 797-802
- https://doi.org/10.1002/pssa.19700020416
Abstract
No abstract availableKeywords
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- Some defects in crystals grown from the melt - I. Defects caused by thermal stressesProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1956
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