4H-SiC visible blind UV avalanche photodiode
- 27 May 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (11) , 929-930
- https://doi.org/10.1049/el:19990641
Abstract
The first 4H-SiC avalanche photodiode for visible-blind UV applications has been designed and fabricated successfully. The device structure is described and the photo-responsivity characteristics presented. The observation of a positive temperature coefficient for an avalanche breakdown voltage up to 257°C is also discussed.Keywords
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