Avalanche breakdown of high-voltage p-n junctions of SiC
- 29 February 1996
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 27 (1) , 43-51
- https://doi.org/10.1016/0026-2692(95)00056-9
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbideMaterials Science and Engineering: B, 1988
- Breakdown voltage modeling in mesa power devicesPhysica Status Solidi (a), 1983
- Analytical solutions for the breakdown voltage of abrupt cylindrical and spherical junctionsSolid-State Electronics, 1976
- A general method for predicting the avalanche breakdown voltage of negative bevelled devicesIEEE Transactions on Electron Devices, 1976
- Influence of bevel angle and surface charge on the breakdown voltage of negatively beveled diffused p-n junctionsSolid-State Electronics, 1975
- Depletion layer characteristics at the surface of beveled high-voltage P-N junctionsIEEE Transactions on Electron Devices, 1973
- Field distribution near the surface of beveled P-N junctions in high-voltage devicesIEEE Transactions on Electron Devices, 1973
- Effect of junction curvature on breakdown voltage in semiconductorsSolid-State Electronics, 1966
- Control of electric field at the surface of P-N junctionsIEEE Transactions on Electron Devices, 1964
- Some Experiments on, and a Theory of, Surface BreakdownJournal of Applied Physics, 1956