Noise and photoconductive gain in InAs quantum-dot infrared photodetectors
- 5 August 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (6) , 1234-1236
- https://doi.org/10.1063/1.1597987
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Comparison of HgCdTe and quantum-well infrared photodetector dual-band focal plane arraysOptical Engineering, 2003
- Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivityIEEE Journal of Quantum Electronics, 2002
- Voltage-controllable multiwavelength InAs quantum-dot infrared photodetectors for mid- and far-infrared detectionJournal of Applied Physics, 2002
- Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectorsApplied Physics Letters, 2002
- Evaluation of the fundamental properties of quantum dot infrared detectorsJournal of Applied Physics, 2002
- Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active regionJournal of Applied Physics, 2001
- Photovoltaic quantum-dot infrared detectorsApplied Physics Letters, 2000
- A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetectorApplied Physics Letters, 1999
- Noise performance of InGaAs-InP quantum-well infrared photodetectorsIEEE Journal of Quantum Electronics, 1998
- The theory of quantum-dot infrared phototransistorsSemiconductor Science and Technology, 1996