Interaction of Cu, Ag and Au with van der Waals faces of WS, and SnS2
- 31 December 1988
- journal article
- Published by Elsevier in Surface Science
- Vol. 201 (1-2) , 211-227
- https://doi.org/10.1016/0039-6028(88)90607-3
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Adsorption of Br2 on n-MoSe2: modelling photoelectrochemistry in the UHVChemical Physics Letters, 1986
- Initial formation process of metal/silicon interfacesSurface Science, 1986
- The mechanisms of Schottky barrier pinning in III–V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experimentsSurface Science, 1986
- Demonstration of the surface stability of the Van Der Waals surface (0001) of MoSe2 by LEED and electrochemistrySurface Science, 1984
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982
- The adsorption and binding of thiophene, butene and H2S on the basal plane of MoS2 single crystalsChemical Physics Letters, 1982
- Metal–GaSe and metal–InP interfaces: Schottky barrier formation and interfacial reactionsJournal of Vacuum Science and Technology, 1982
- Metal-gallium selenide interfaces-observation of the true Schottky limitJournal of Physics C: Solid State Physics, 1982
- Photoelectrochemical energy conversion involving transition metal d-states and intercalation of layer compoundsPublished by Springer Nature ,1982
- Solar cell materials and their basic parametersApplied Physics B Laser and Optics, 1978