Heavy-doping effects and impurity segregation during high-pressure oxidation of silicon
- 15 February 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (4) , 275-277
- https://doi.org/10.1063/1.91451
Abstract
Silicon samples which were ion‐ implanted with boron or arsenic were oxidized in high‐pressure (10 atm) pyrogenic steam to determine the effects of heavy doping on the oxide growth rate. Heavy n‐type doping (arsenic) was found to enhance the silicon oxidation rate, but the enhancement was not as great as for oxidation at atmospheric pressure. For p‐type (boron) doping there was only slight enhancement for both high‐pressure and 1‐atm oxidations. Samples were then depth profiled using secondary‐ion mass spectroscopy (SIMS) to observe the segregation of boron and arsenic at the Si:SiO2 interface. The effective coefficients of the impurities for high‐pressure oxidation were found to deviate significantly from those for atmospheric pressure oxidation.Keywords
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