Porous Silicon Nanostructure Revealed By Electron Spin Resonance
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Electron paramagnetic resonance observation of trigonally symmetric Si dangling bonds in porous silicon layers: Evidence for crystalline Si phaseApplied Physics Letters, 1993
- Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote-plasma treatmentApplied Physics Letters, 1993
- Luminescence cycling and defect density measurements in porous silicon: Evidence for hydride based modelApplied Physics Letters, 1992
- Luminescence degradation in porous siliconApplied Physics Letters, 1992
- Properties of Porous Silicon with Photoluminescence Enhanced by a Remote-Plasma TreatmentMRS Proceedings, 1992
- ESR Study of Porous SiliconMRS Proceedings, 1992
- Strain broadening of the dangling-bond resonance at the (111)Si-interfacePhysical Review B, 1986
- Characterization of Si/SiO2 interface defects by electron spin resonanceProgress in Surface Science, 1983