Mechanical properties of 3C silicon carbide
- 15 June 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (24) , 2992-2994
- https://doi.org/10.1063/1.106786
Abstract
The residual stress and Young’s modulus of 3C silicon carbide (SiC) epitaxial films deposited on silicon substrates were measured by load‐deflection measurements using suspended SiC diaphragms fabricated with silicon micromachining techniques. The film’s residual stress was tensile and averaged 274 MPa while the in‐plane Young’s modulus averaged 394 GPa. In addition, the bending moment due to the residual stress variation through the thickness of the film was determined by measuring the deflection of free‐standing 3C‐SiC cantilever beams. The bending moment was in the range of 2.6×10−8–4.2×10−8 N m.Keywords
This publication has 6 references indexed in Scilit:
- High-voltage 6H-SiC p-n junction diodesApplied Physics Letters, 1991
- Mechanical integrity of polysilicon films exposed to hydrofluoric acid solutionsJournal of Electronic Materials, 1991
- High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin filmsApplied Physics Letters, 1987
- Microfabricated structures for the i n s i t u measurement of residual stress, Young’s modulus, and ultimate strain of thin filmsApplied Physics Letters, 1987
- Growth and Characterization of Cubic SiC Single‐Crystal Films on SiJournal of the Electrochemical Society, 1987
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983