Stacked inductors and transformers in CMOS technology
Top Cited Papers
- 1 April 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 36 (4) , 620-628
- https://doi.org/10.1109/4.913740
Abstract
A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 to 266 nH and self-resonance frequencies of 11.2 to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. Stacked transformers are also introduced that achieve voltage gains of 1.8 to 3 at multigigahertz frequencies. The structures have been fabricated in standard digital CMOS technologies with four and five metal layers.Keywords
This publication has 9 references indexed in Scilit:
- An analytical model of planar inductors on lowly doped silicon substrates for high frequency analog design up to 3 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- CMOS technology characterization for analog and RF designIEEE Journal of Solid-State Circuits, 1999
- Simple accurate expressions for planar spiral inductancesIEEE Journal of Solid-State Circuits, 1999
- On-chip spiral inductors with patterned ground shields for Si-based RF ICsIEEE Journal of Solid-State Circuits, 1998
- Analysis, design, and optimization of spiral inductors and transformers for Si RF ICsIEEE Journal of Solid-State Circuits, 1998
- Monolithic transformers and their application in a differential CMOS RF low-noise amplifierIEEE Journal of Solid-State Circuits, 1998
- RF circuit design aspects of spiral inductors on siliconIEEE Journal of Solid-State Circuits, 1998
- The modeling, characterization, and design of monolithic inductors for silicon RF IC'sIEEE Journal of Solid-State Circuits, 1997
- Design of Planar Rectangular Microelectronic InductorsIEEE Transactions on Parts, Hybrids, and Packaging, 1974