RF circuit design aspects of spiral inductors on silicon
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 33 (12) , 2028-2034
- https://doi.org/10.1109/4.735544
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Modeling, characterization and design of monolithic inductors for silicon RFICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Monolithic spiral inductors fabricated using a VLSI Cu-damascene interconnect technology and low-loss substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Experimental results and simulation of substrate noise coupling via planar spiral inductor in RF ICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 6.25-GHz low DC power low-noise amplifier in SiGePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Novel substrate contact structure for high-Q silicon-integrated spiral inductorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 2.5-GHz BiCMOS transceiver for wireless LAN'sIEEE Journal of Solid-State Circuits, 1997
- Multilevel-spiral inductors using VLSI interconnect technologyIEEE Electron Device Letters, 1996
- Integrated RF and microwave components in BiCMOS technologyIEEE Transactions on Electron Devices, 1996
- A 2.4-GHz silicon bipolar oscillator with integrated resonatorIEEE Journal of Solid-State Circuits, 1996
- Si IC-compatible inductors and LC passive filtersIEEE Journal of Solid-State Circuits, 1990