Impact of strain relaxation of Al Ga1−N layer on 2-DEG sheet charge density and current voltage characteristics of lattice mismatched Al Ga1−N/GaN HEMTs
- 1 March 2002
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 33 (3) , 205-212
- https://doi.org/10.1016/s0026-2692(01)00148-3
Abstract
No abstract availableKeywords
Funding Information
- University Grants Commission
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