Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors
- 18 October 1999
- journal article
- review article
- Published by Elsevier in Solid-State Electronics
- Vol. 43 (10) , 1909-1927
- https://doi.org/10.1016/s0038-1101(99)00146-x
Abstract
No abstract availableKeywords
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