Theoretical investigation of electrical characteristics of AlGaN/GaN modulation doped field-effect transistors
- 1 September 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (5) , 3031-3042
- https://doi.org/10.1063/1.363162
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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