Abstract
The Schottky-Mott theory of the barrier layer rectification is extended with respect to the action of light absorbed in the barrier layer. The essential physical assumptions to be used are as follows: (a) The barrier layer is a boundary layer of a semiconductor with a reduced density of mobile charges (either electrons or "holes"); (b) both positive and negative mobile charges are released by light; (c) the recombination within the barrier layer is negligible; and, (d) the electrons and "holes" have the same properties whether released by light or by thermal agitation. Thus an "equation of state" connecting photo-voltage, photo-current, light intensity, wave-length, external resistance, etc., is derived. Among others the regularities of short circuit current, open circuit voltage, photo-characteristic, dark characteristic (barrier layer rectification), power output, and spectral distribution of the quantum yield are involved.

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