Influence of impurities and structural properties on the device stability of pentacene thin film transistors
- 15 February 2007
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 101 (4)
- https://doi.org/10.1063/1.2432369
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Environmental stability and electronic transport of pentacene thin film transistorsJournal of Non-Crystalline Solids, 2006
- Operational and environmental stability of pentacene thin-film transistorsApplied Physics Letters, 2005
- Gated four-probe measurements on pentacene thin-film transistors: Contact resistance as a function of gate voltage and temperatureJournal of Applied Physics, 2004
- Influence of the dielectric roughness on the performance of pentacene transistorsApplied Physics Letters, 2004
- Recent Progress in Organic Electronics: Materials, Devices, and ProcessesChemistry of Materials, 2004
- The influence of bulk traps on the subthreshold characteristics of an organic field effect transistorSynthetic Metals, 2003
- Dopant density determination in disordered organic field-effect transistorsJournal of Applied Physics, 2003
- Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transportJournal of Applied Physics, 2003
- Organic Thin Film Transistors for Large Area ElectronicsAdvanced Materials, 2002
- Pentacene organic thin-film transistors for circuit and display applicationsIEEE Transactions on Electron Devices, 1999