High performance silicon bipolar power amplifier for 1.8 GHz applications
- 25 June 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- An integrated 2 GHz 500 mW bipolar amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A very high efficiency silicon bipolar transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A monolithic 2.5 V, 1 W silicon bipolar power amplifier with 55% PAE at 1.9 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHzIEEE Journal of Solid-State Circuits, 1999
- Class-F power amplifiers with maximally flat waveformsIEEE Transactions on Microwave Theory and Techniques, 1997