Donor doping in metalorganic chemical vapor deposition of HgCdTe using ethyl iodide
- 11 July 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (2) , 195-197
- https://doi.org/10.1063/1.112669
Abstract
Highly effective donor doping during metalorganic chemical vapor deposition interdiffused multilayer growth of Hg1−xCdxTe is demonstrated using a novel precursor of iodine, ethyl iodide. It is shown that the doping level can be controlled in the range of 7×1014–2×1018 cm−3 with abrupt profiles and without any memory effect. Activation of the iodine as a singly ionized donor is shown to be near 100% at concentrations <1×1017 cm−3. Electron mobilities are ≥1×105 and ≥2×105 cm2/V s at 80 and 20 K, respectively, for concentrations of (1–3)×1015 cm−3 and x values ∼0.22. Auger limited lifetimes of ∼1 μs are observed for these layers at 80 K.Keywords
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