Novel very sensitive analytical technique for compositional analysis of Hg1−xCdxTe epilayers
- 13 January 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (2) , 222-224
- https://doi.org/10.1063/1.106970
Abstract
This letter reports a novel analytical method using negative secondary ion mass spectrometry (SIMS) of the Te matrix element with a Cs primary ion beam to analyze and determine the composition in HgCdTe epilayers with a high sensitivity (better than Δx of 0.0015) and a depth resolution determined by SIMS. The method is based on matrix‐induced ion yield variations in the Te signal observed in SIMS. The correlation between the Te− secondary ion yield and Cd mole fraction is a linear function. The material composition can be calculated by this technique when the Te yield profile is known provided that the composition of any two layers of the structure are known, or the structure contains a CdTe layer, for which case composition of no Hg1−xCdxTe layer is needed.Keywords
This publication has 6 references indexed in Scilit:
- Ellipsometric profiling of HgCdTe heterostructuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Ion-induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotationJournal of Vacuum Science & Technology A, 1991
- Molecular-beam epitaxy growth and i n s i t u arsenic doping of p-on-n HgCdTe heterojunctionsJournal of Applied Physics, 1991
- MOCVD Hg1-xCdxTe/GaAs for IR detectorsSemiconductor Science and Technology, 1990
- The exponential optical absorption band tail of Hg1−xCdxTeJournal of Applied Physics, 1984
- Matrix effect in SIMS analysis using an O2+ primary beamJournal of Vacuum Science and Technology, 1980