Epitaxial Growth of γ-In2Se3 Films by Molecular Beam Epitaxy
- 1 February 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (2R) , 509-512
- https://doi.org/10.1143/jjap.40.509
Abstract
Epitaxial growth of γ-In2Se3 film was investigated by molecular beam epitaxy (MBE). γ-In2Se3 epiataxial films with a defect wurtzite structure were successfully grown on GaAs(111)B substrates for the first time. The crystal structure of the γ-In2Se3 epitaxial film was determined by X-ray diffraction (XRD) and atomic force microscopy (AFM). It was found that γ-In2Se3 epitaxial films exhibit a vacancy-ordered crystal structure and that sharrow hexagonal cone structures were formed on the film surface. Furthermore, optical properties of the γ-In2Se3 epitaxial films were investigated by spatially resolved cathodoluminescence (CL).Keywords
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