Molecular Beam Epitaxy and Characterization of Layered In2Se3 Films Grown on Slightly Misoriented (001)GaAs Substrates

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Abstract
In2Se3 epitaxial films with a layered structure were successfully grown on (001)GaAs substrates by molecular beam epitaxy. X-ray diffraction and electron diffraction studies revealed that the crystallinity of the films was improved by using slightly misoriented (001)GaAs substrates. Furthermore, electrical and optical anisotropies were observed in layered In2Se3 films. It was found that the conductivity of layered In2Se3 epitaxial films along the a-axis was much larger than that along the c-axis, and that the absorption coefficient of layered In2Se3 epitaxial films for light polarized parallel to the a-axis was much higher than that for light polarized parallel to the c-axis.