Control of the Arrangement of the Native Gallium Vacancies in Ga2Se3on (100)GaAs by Molecular Beam Epitaxy

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Abstract
We attempted to control the arrangement of the native Ga vacancies in Ga2Se3films on (100)GaAs substrates by molecular beam epitaxy. When the GaAs substrates were heat-treated at 550° C before growth, the vacancy-ordered superstructure was formed in the [011̄] direction, which is different from the ordering direction in Ga2Se3on (100)GaP. On the other hand, when the heat treatment was not carried out, the ordering direction was [011] at growth temperatures below 500° C. These results indicate that the initial stage of the growth affects the ordering direction in Ga2Se3on (100)GaAs. We have successfully controlled the ordering direction by introducing a Ga2Se3buffer layer grown at low temperature. Furthermore, we investigated the effects of the growth conditions on the ordering of the Ga vacancies in Ga2Se3films on (100)GaAs, and it was found that the vacancy ordering was highly developed at high VI/III ratio and low growth temperature.