Temperature variable noise and electrical characteristics of Au-Ga-As Schottky barrier millimeter-wave mixer diodes
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 36 (11) , 1469-1475
- https://doi.org/10.1109/22.8909
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Field and thermionic-field emission in Schottky barriersPublished by Elsevier ,2002
- Temperature-Variable Characteristics and Noise in Metal--Semiconductor JunctionsIEEE Transactions on Microwave Theory and Techniques, 1986
- High-frequency noise and current-voltage characteristics of mm-wave platinum n–n+–GaAs Schottky barrier diodesJournal of Applied Physics, 1986
- Interracial Stress and Excess Noise in Schottky-Barrier Mixer DiodesIEEE Transactions on Microwave Theory and Techniques, 1986
- Accurate Determination of the Series Resistance of mm-Wave Schottky-DiodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Summary Abstract: Are they really Schottky barriers after all?Journal of Vacuum Science and Technology, 1982
- Transient and steady-state electron transport properties of GaAs and InPJournal of Applied Physics, 1977
- Unified theory of high-frequency noise in Schottky barriersJournal of Applied Physics, 1973
- Carrier accumulation and space-charge-limited current flow in field-effect transistorsSolid-State Electronics, 1970
- Single-Carrier Injection in Silicon at 76° and 300°KJournal of Applied Physics, 1964