Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide
- 1 June 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (6A) , L414
- https://doi.org/10.1143/jjap.24.l414
Abstract
Growth-interrupted interfaces in Molecular Beam Epitaxy (MBE) have been characterized by C-V measurements and secondary ion mass spectroscopy. Carriers were depleted around the interfaces depending on interruption conditions such as the background vacuum and the interrupted period. For the depleted samples, carbon was detected at the interfaces. This carbon contaminant deteriorated crystal quality at the interface and caused carrier depletion. Using the MBE system combined with a maskless ion implanter in ultrahigh vacuum (UHV), a selectively Si-implanted GaAs multilayer structure was grown without interface degradation.Keywords
This publication has 6 references indexed in Scilit:
- Protection of an interrupted molecular-beam epitaxially grown surface by a thin epitaxial layer of InAsApplied Physics Letters, 1984
- GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion ImplanterJapanese Journal of Applied Physics, 1984
- Arsenic passivation: a possible remedy for MBE growth-interruption problemsElectronics Letters, 1984
- Carrier compensation at interfaces formed by molecular beam epitaxyJournal of Applied Physics, 1982
- Protection of molecular beam epitaxy grown AlxGa1−xAs epilayers during ambient transferJournal of Vacuum Science and Technology, 1981
- Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1980