Semiconductor surface etching by halogens: Fundamental steps
- 1 January 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 36 (1-4) , 296-312
- https://doi.org/10.1016/0169-4332(89)90925-2
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Thermal desorption of gasesPublished by Elsevier ,2002
- On the relative importance of physical and chemical sputtering during ion-enhanced etching of silicon by XeF2Applied Physics Letters, 1987
- Reaction mechanisms for the photon-enhanced etching of semiconductors: An investigation of the UV-stimulated interaction of chlorine with Si(100)Surface Science, 1986
- Studies of adsorption and electron-induced dissociation of Fe(CO)5 on Si(100)Surface Science, 1986
- Chlorine surface interaction and laser-induced surface etching reactionsJournal of Vacuum Science & Technology B, 1985
- Laser-induced gas-surface interactionsSurface Science Reports, 1983
- Laser chemical technique for rapid direct writing of surface relief in siliconApplied Physics Letters, 1981
- Etching and film formation in CF3Br plasmas: some qualitative observations and their general implicationsJournal of Vacuum Science and Technology, 1980
- Anisotropic plasma etching of polysiliconJournal of Vacuum Science and Technology, 1980
- Adsorption-desorption properties and surface structural chemistry of chlorine on Cu(111) and Ag(111)Surface Science, 1977