Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance

Planar $\mathrm{p-n}$ diodes with edge termination were fabricated by aluminum implantation on $n$ -type $\text{4H}$ silicon carbide. These diodes exhibited an excellent blocking behavior up to 1400 V reverse voltage with stable avalanche breakdown at an electric field strength of 2.8 MV/cm. In addition, a nearly classical forward characteristic was observed with both recombination and diffusion current mechanism represented by ideality factors of 1.05 and 1.93, respectively. The turn-on voltage was 2.8 V. At a forward voltage drop of 6.2 V a current density of $\text{4000\hspace{0.17em}}{\mathrm{A/cm}}^{\mathrm{2}}$ and a differential on resistance below $\text{1\hspace{0.17em}}{\mathrm{m\Omega \hspace{0.17em}cm}}^{\mathrm{2}}$ were achieved.