High Electric Field Breakdown of 4H-SiC PN Junction Diodes

This publication has 5 references indexed in Scilit:

• A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage
  IEEE Electron Device Letters, 1994
• High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances
  IEEE Electron Device Letters, 1993
• 6H-silicon carbide devices and applications
  Physica B: Condensed Matter, 1993
• Silicon-carbide high-voltage (400 V) Schottky barrier diodes
  IEEE Electron Device Letters, 1992
• High-voltage 6H-SiC p-n junction diodes
  Applied Physics Letters, 1991