GaAs-AlxGa1−xAs buried-heterostructure lasers grown by molecular beam epitaxy with Al0.65Ga0.35As (Ge-doped) liquid phase epitaxy overgrown layer for current injection confinement
- 1 May 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (9) , 730-733
- https://doi.org/10.1063/1.91648
Abstract
GaAs‐AlxGa1−xAs buried‐heterostructure (BH) lasers were fabricated by a molecular beam epitaxy/liquid phase epitaxy (MBE/LPE) hybrid technique. The BH lasers with 5 μm stripe width have cw current thresholds as low as 15 and 26 mA for diode lengths of 250 and 380 μm, respectively. We also introduced a new, simple, and convenient method for achieving efficient lateral current injection confinement in BH lasers by using the highly resistive LPE‐grown Al0.65Ga0.35As (lightly Ge‐doped) layer. This technique also automatically self‐aligns the current injection stripes to the active stripes.Keywords
This publication has 10 references indexed in Scilit:
- Infrared-visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double-heterostructure lasers grown by molecular beam epitaxyJournal of Applied Physics, 1980
- Very low current threshold GaAs-AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1980
- Electrical properties of Ge-doped p-type AlxGa1−xAsJournal of Applied Physics, 1979
- Anomalous electrical and optical characteristics of GaAs/AlxGa1−xAs heterostructure materialsApplied Physics Letters, 1979
- New stripe-geometry laser with simplified fabrication processElectronics Letters, 1979
- GaAs-AlxGa1-xAs strip buried heterostructure lasersIEEE Journal of Quantum Electronics, 1979
- Low-current-threshold strip-buried-heterostructure lasers with self-aligned current injection stripesApplied Physics Letters, 1979
- Low-current-threshold and high-lasing uniformity GaAs–AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1979
- Integrated GaAs-AlxGa1-xAs double-heterostructure laser with independently controlled optical output divergenceIEEE Journal of Quantum Electronics, 1975
- GaAs–Ga1−xAlxAs buried-heterostructure injection lasersJournal of Applied Physics, 1974