Negatively charged state of atomic hydrogen inn-type GaAs

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Abstract
It is demonstrated that atomic hydrogen drifts as a negatively charged state in n-type GaAs and the high electric field strongly affects the dissociation of the hydrogen-donor complex. During reverse-bias-anneal experiments on the Schottky diode, it is confirmed that a negatively charged hydrogen atom is accelerated out of the high-field region and that there is a dissociation-frequency region independent of the anneal temperature. In the dissociation-frequency region dependent on the anneal temperature, the first-order kinetics gives rise to the dissociation energy for the release of the hydrogen–Si donor complex. The dissociation energies are dependent on the applied bias voltage and are in the range of 1.79 to 1.2 eV. Atomic hydrogen in plasma-hydrogenated Si-doped n-type GaAs is proposed to be negatively charged with the gain of free electrons and passivates the Si donor, and also the hydrogen or the electron of the hydrogen–Si donor complex to be easily released by the electric field.