A high voltage MOS switch
- 1 June 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 10 (3) , 136-142
- https://doi.org/10.1109/jssc.1975.1050578
Abstract
A novel MOS high voltage switch suitable for use in integrated circuits is described. The device doubles the operational voltage capability, compared to the standard MOS transistor used in integrated circuits. It uses a unique variable positive feedback which increases dramatically its saturation current and permits significant saving of the circuit area. The switch is fabricated using common Sigate technology. No additional processing steps are required.Keywords
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