Development of single-ion implantation — controllability of implanted ion number
- 1 June 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 117-118, 677-683
- https://doi.org/10.1016/s0169-4332(97)80163-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- STM observation of ‘craters’ on graphite surface induced by single ion implantationApplied Surface Science, 1996
- Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET'sIEEE Transactions on Electron Devices, 1994
- A focused ion beam system with a retarding mode objective lensJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Ion formation in alloy liquid-metal-ion sourcesJournal of Applied Physics, 1987
- Long-lifetime, reliable liquid metal ion sources for boron, arsenic, and phosphorusJournal of Vacuum Science & Technology B, 1987
- Development of boron liquid–metal–ion sourceJournal of Vacuum Science & Technology A, 1984
- Liquid metal alloy ion sources for B, Sb, and SiJournal of Vacuum Science and Technology, 1981
- Electron emission from molybdenum under ion bombardmentJournal of Physics D: Applied Physics, 1981