Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface
- 15 December 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (17) , 12672-12674
- https://doi.org/10.1103/physrevb.38.12672
Abstract
An atomic mechanism is proposed to account for the generation of the (2×1) reconstruction of the (111) surface of silicon on cleavage at low temperature. The π-bonded chain model is assumed for the reconstruction. By reducing the dimensionality of the phase transformation, the proposed kink mechanism provides a low-energy pathway for the reconstruction. The energy gain due to surface reconstruction must be considered in theories of lattice trapping during fracture.Keywords
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