Switching of deep levels in CuInSe2 due to electric field-induced Cu ion migration
- 15 October 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (8) , 4322-4326
- https://doi.org/10.1063/1.368651
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Defect physics of thechalcopyrite semiconductorPhysical Review B, 1998
- Dopant Electromigration in SemiconductorsAdvanced Materials, 1997
- Junction sharpness in field-induced transistor structures in CuxAg1−xInSe2Journal of Applied Physics, 1996
- Characterization of ZnO/CdS/CuInSe 2 Thin-Film Solar Cells by Deep-Level Transient SpectroscopyJapanese Journal of Applied Physics, 1995
- Improved defect-pool model for charged defects in amorphous siliconPhysical Review B, 1993
- Photoluminescence Studies and Solar-Cell Application of CuInSe2 Thin Films Prepared using Selenization TechniquesJapanese Journal of Applied Physics, 1993
- Ion migration in chalcopyrite semiconductorsThe Journal of Physical Chemistry, 1992
- Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe 2 CrystalsScience, 1992
- Defect formation ina-Si:HPhysical Review B, 1990
- Influence of intrinsic defects on the electrical properties of AIBIIIC compoundsCrystal Research and Technology, 1983