Electron Slowing-Down Spectrum in Irradiated Silicon
- 1 March 1973
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 7 (5) , 1798-1811
- https://doi.org/10.1103/physrevb.7.1798
Abstract
An electron slowing-down flux spectrum has been measured for particles, rays, and secondaries in neutron-activated silicon over the energy range from a few eV to 30 keV. The spectrum is found to be similar to slowing-down spectra generated in metals by particles. Absolute agreement with predictions of the Spencer—Fano theory is found for energies above 10 keV. Experimental fluxes are somewhat larger for lower energies. A companion theoretical calculation has been carried out based on model cross sections for Si. These include the effects of plasmon creation and electron-hole pair production in the valence band and excitation of electrons from the and levels. The latter processes were described on the basis of sum-rule-corrected classical cross sections. Monte Carlo calculations of the slowing-down spectrum were made. The present theory, as well as an empirically shell-corrected Spencer—Attix theory, gives spectra which are smaller than experiment by a factor of ∼ 4 in the 10- to 100-eV range.
Keywords
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