Use of methane in an electron cyclotron resonance plasma source for carbon delta-doping in GaAs molecular beam epitaxy
- 8 April 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (14) , 1494-1496
- https://doi.org/10.1063/1.105182
Abstract
An electron cyclotron resonance (ECR) plasma source has been used with methane gas to perform carbon delta‐doping in GaAs grown by molecular beam epitaxy (MBE). The ECR plasma source is installed on a chemical vapor deposition chamber which is vacuum connected to a conventional MBE apparatus. Good surface morphologies, high sheet carrier densities (1–7×1012 cm−2), and reasonable hole mobilities (75–110 cm2/V s) are obtained.Keywords
This publication has 7 references indexed in Scilit:
- A Study of Cold Dopant Sources for Gas Source MBE: The use of Disilane as an N-Type Dopant of AlxGa1-xAs (x=0–0.28) and Trimethylgallium as a P-Type Dopant of GaAsJapanese Journal of Applied Physics, 1990
- Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxyApplied Physics Letters, 1989
- Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxyJournal of Crystal Growth, 1989
- Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filamentApplied Physics Letters, 1988
- Characterization of p-type GaAs heavily doped with carbon grown by metalorganic molecular-beam epitaxyJournal of Applied Physics, 1988
- Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxyJournal of Applied Physics, 1988
- Intentional ρ-type doping by carbon in metalorganic MBE of GaAsJournal of Electronic Materials, 1986