A heterojunction bipolar transistor with a thin /spl alpha/-Si emitter
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (6) , 932-935
- https://doi.org/10.1109/16.293304
Abstract
In this paper, a modified silicon heterojunction bipolar transistor is proposed and demonstrated. The structure uses a very thin n/sup +/ amorphous silicon layer as the emitter to enhance the emitter injection efficiency and reduce the emitter resistance as well as improve the frequency response of the device.Keywords
This publication has 8 references indexed in Scilit:
- A complete and consistent electrical/thermal HBT modelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Si/a-Si:H heterojunction microwave bipolar transistors with cut-off frequencies f/sub t/ above 5 GHzIEEE Transactions on Electron Devices, 1990
- The emitter-base interface current in silicon bipolar transistors with emitters deposited by plasma-enhanced CVDIEEE Transactions on Electron Devices, 1989
- Method for determining the emitter and base series resistances of bipolar transistorsIEEE Transactions on Electron Devices, 1984
- A silicon bipolar transistor with a hydrogenated amorphous emitterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982
- Enhancement of effective barrier height in Ti-silicon Schottky diode using low-energy ion implantationIEEE Transactions on Electron Devices, 1980
- Theory of a Wide-Gap Emitter for TransistorsProceedings of the IRE, 1957