The emitter-base interface current in silicon bipolar transistors with emitters deposited by plasma-enhanced CVD
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (12) , 2889-2894
- https://doi.org/10.1109/16.40951
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silaneApplied Physics Letters, 1987
- Amorphous and microcrystalline silicon bipolar heterojunction transistorsJournal of Non-Crystalline Solids, 1987
- The use of amorphous and microcrystalline silicon for silicon heterojunction bipolar transistorsApplied Physics A, 1986
- Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor depositionApplied Physics Letters, 1986
- Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopyApplied Physics A, 1986
- Ohmic and Quasi-Ohmic Contacts to Hydrogenated Amorphous Silicon Thin FilmsMRS Proceedings, 1986
- Electrical properties of n-amorphous/p-crystalline silicon heterojunctionsJournal of Applied Physics, 1984
- Effect of Si-Ge buffer layer for low-temperature Si epitaxial growth on Si substrate by rf plasma chemical vapor depositionJournal of Applied Physics, 1983
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982
- nGepGaAs HeterojunctionsSolid-State Electronics, 1966