The use of amorphous and microcrystalline silicon for silicon heterojunction bipolar transistors
- 1 December 1986
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 41 (4) , 291-295
- https://doi.org/10.1007/bf00616051
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Contact resistance measurements for hydrogenated amorphous silicon solar cell structuresJournal of Applied Physics, 1986
- Study of the band discontinuities at the a-SiH/c-Si interface by internal photoemissionJournal of Non-Crystalline Solids, 1985
- Photoemission studies of amorphous semiconductor heterojunctionsJournal of Non-Crystalline Solids, 1985
- Comparison of experimental and theoretical results on polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1984
- Electrical properties of n-amorphous/p-crystalline silicon heterojunctionsJournal of Applied Physics, 1984
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982
- Effect of emitter contact on current gain of silicon bipolar devicesIEEE Transactions on Electron Devices, 1980
- The SIS tunnel emitter: A theory for emitters with thin interface layersIEEE Transactions on Electron Devices, 1979
- Electrical Transport in nGe-pGaAs Heterojunctions†International Journal of Electronics, 1966
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962