Electrical Transport in nGe-pGaAs Heterojunctions†
- 1 June 1966
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 20 (6) , 583-599
- https://doi.org/10.1080/00207216608937891
Abstract
A multi-step recombination-tunnelling model, similar to that used to describe the excess current in tunnel diodes, is developed to explain the observed electrical characteristics of nGe-pGaAs heterodiodes. Two different, but quite similar models are used to qualitatively describe the observed forward and reverse characteristics. Quantitative agreement with the experimental characteristics of the many devices presented is obtained by an empirical modification of the resulting equations. The lack of minority carrier injection in these devices is in agreement with the proposed model.Keywords
This publication has 11 references indexed in Scilit:
- Preparation of Ge/Si and Ge∕GaAs HeterojunctionsJournal of the Electrochemical Society, 1966
- Effect of Crystal Orientation on Ge-GaAs HeterojunctionsJournal of Applied Physics, 1964
- Germanium-Silicon Alloy HeterojunctionsJournal of the Electrochemical Society, 1964
- Voltage-Annealing of Radiation Damage in Tunnel DiodesJournal of Applied Physics, 1963
- The Use of Close Spacing in Chemical-Transport Systems for Growing Epitaxial Layers of SemiconductorsJournal of the Electrochemical Society, 1963
- Avalanche Breakdown in Gallium ArsenideJunctionsPhysical Review B, 1962
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962
- Excess Tunnel Current in Silicon Esaki JunctionsPhysical Review B, 1961
- Vapor-Deposited Single-Crystal GermaniumJournal of Applied Physics, 1960
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957