Effect of Crystal Orientation on Ge-GaAs Heterojunctions
- 1 March 1964
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (3) , 612-617
- https://doi.org/10.1063/1.1713424
Abstract
The electrical characteristics of Ge‐GaAs heterojunctions, in particular n‐n junctions, have been studied experimentally. Barrier voltages, determined from the temperature dependence of reverse current and from capacitance vs voltage, depend upon the crystal orientation of the interface. This is seen to imply a corresponding variation of the conduction band discontinuities; namely ΔEc[111]Ga > ΔEc[111]As >ΔEc[110]. The voltage dependence of the reverse current is interpreted in terms of the shift of the Fermi level with respect to the conduction band edge in the accumulation layer. The transient behavior of n‐n heterojunctions yields a switching time for 20 mA less than 10−9 sec, and no observed storage time.This publication has 6 references indexed in Scilit:
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- Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle ProcessIBM Journal of Research and Development, 1960
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- Transient Response of a p-n JunctionJournal of Applied Physics, 1954
- Switching Time in Junction Diodes and Junction TransistorsProceedings of the IRE, 1954