Contact resistance measurements for hydrogenated amorphous silicon solar cell structures
- 1 March 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (5) , 1682-1687
- https://doi.org/10.1063/1.336431
Abstract
A technique for measuring the electrical characteristics of contacts to doped hydrogenated amorphous silicon (a-Si:H) or other high-resistivity thin-film semiconductors is developed. Experimental results for metal and conductive transparent oxide contacts to both n- and p-type a-Si:H are presented and the significance of these values to solar cell applications discussed.This publication has 10 references indexed in Scilit:
- Optical scattering at conductive transparent oxide surfacesApplications of Surface Science, 1985
- Optical properties and quantum efficiency of a-Si1−xCx:H/a-Si:H solar cellsJournal of Applied Physics, 1985
- Hydrogen plasma interactions with tin oxide surfacesThin Solid Films, 1984
- Contact resistance and methods for its determinationThin Solid Films, 1983
- Barrier at the interface between amorphous silicon and transparent conducting oxides and its influence on solar cell performanceJournal of Applied Physics, 1983
- Amorphous Silicon-Germanium-Boron Alloy Applied to Low-Loss and High-Speed DiodesJapanese Journal of Applied Physics, 1982
- Silicon-Germanium-Boron Ternary Amorphous AlloyJapanese Journal of Applied Physics, 1982
- Characterized of glow-discharge deposited a-Si:HSolar Energy Materials, 1980
- Models for contacts to planar devicesSolid-State Electronics, 1972
- Messung des übergangswiderstandes zwischen metall und diffusionsschicht in Si-planarelementenSolid-State Electronics, 1969