Extended moment equations for electron transport in semiconducting submicron structures

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Abstract
We present an extended set of moment equations which allow us to investigate hot-electron effects and ballistic transport in semiconducting devices with inhomogeneities in the submicron range. This model extends the familiar drift-diffusion description but nevertheless is computationally not much more involved. In contrast to full solutions of the Boltzmann transport equation, which can be obtained only in very simple limits, our model can describe realistic geometries and general collision processes. We find reasonably good agreement with rigorous solutions where these exist.