Determination of low dose concentration profiles in solids by means of (n, p) and (n, α) reactions
- 1 March 1977
- journal article
- Published by Springer Nature in Journal of Radioanalytical and Nuclear Chemistry
- Vol. 38 (1) , 9-17
- https://doi.org/10.1007/bf02520178
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The determination of low dose boron implanted concentration profiles in silicon by the (n,α) reactionNuclear Instruments and Methods, 1975
- Implantation profiles of low-energy helium in niobium and the blistering mechanismApplied Physics Letters, 1975
- Damage and range profiles of lithium implanted into niobiumJournal of Nuclear Materials, 1974
- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974
- Alpha-Particle Stopping Cross Section of Solids from 0.3 to 2.0 MeVPhysical Review B, 1973
- Alpha-particle stopping cross section of silicon and germaniumJournal of Applied Physics, 1973
- Specific energy loss of 4He ions in silicon (amorphous, polycrystalline, and single crystal)Journal of Applied Physics, 1973
- Technique for determining concentration profiles of boron impurities in substratesJournal of Applied Physics, 1972
- Boron atom distributions in ion-implanted silicon by the (n,4He) nuclear reactionApplied Physics Letters, 1972
- Range and stopping-power tables for heavy ionsAtomic Data and Nuclear Data Tables, 1970